pMOSFET多管级联结构辐照响应特性研究

ｐＭＯＳＦＥＴ剂量计多管级联结构电离辐射响应持性比单管能明显提高辐射响应灵敏度。多管共衬底级联与不共衬底级联灵敏度提高倍数较大。比较了多管共衬底级联结构在两种辐照偏置条件下的辐照响应差异，实验结果表明，辐照时，保持恒流注入条件，其响应灵敏度、线性度和稳定性均高于零偏置的结果。同时，研究了多管级联结构完全退火后的二次辐照响应，结果表明，响应灵敏度与线性度均高于第１次辐照的。

Response characteristics of pMOS dosimeter with the stacked structure of pMOSFETs

This paper has investigated the irradiation response of the stacked structure of pMOS radiation sensitive field effect transistors which susceptible is obviously higher than that of single pMOSFET. The differences of response sensitivity, linearity and stability are compared between two stacked modes: Single substrate and individual substrate. As well as between two bias during irradiation;0V and read out bias (constant source inject source through drain) . The results show that stacked structure with single substrate have higher sensitivity than that with individual substrate, and the response under read out bias has high sensitivity, linearity and stability. The re use of pMOS dosimeter with stacked structure also has been studied. It is found that the sensitivity and linearity of the response of second radiation are higher than that of first radiation.