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Synthesis of vertically aligned carbon nanotube arrays on silicon substrates |
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| Authors: | |
| Affiliation: | 1. Key Laboratory of Radiation Beam Technology and Materials Modification of Ministry of Education, Department of Materials Science and Engineering, Beijing Normal University, Beijing 100875, China 2. Key Laboratory of Radiation Beam Technology and Materials Modification of Ministry of Education, Department of Materials Science and Engineering, Beijing Normal University, Beijing 100875, China;School of Science, Civil Aviation University of China, Tianjin,300300,China 3. Key Laboratory of Radiation Beam Technology and Materials Modification of Ministry of Education, Department of Materials Science and Engineering, Beijing Normal University, Beijing 100875, China;Department of Physics, Nanchang University, Nanchang 330047,China |
| Abstract: | The growth of well-aligned carbon nanotube (CNT) arrays using a heat chemical vapor deposition system on silicon substrates is reported. The growth properties of CNT arrays are studied as a function of synthesis conditions. It is found that 750°C and 10 nm Fe film are suitable conditions for the growth of well-aligned CNT arrays. CNT arrays with a uniform diameter, thick tube wall and firm cohesion to the Si substrate can be grown for C2H2 concentration of 27%. Based on the experiment, the processes of improving the alignment of CNT arrays and cohesion between CNT arrays and Si substrates are discussed. |
| Keywords: | carbon nanotubes vertically aligned silicon substrate chemical vapor deposition |
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