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Etching of SiC in Low Power Inductively-Coupled Plasma |
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| Authors: | Osipov A. A. Aleksandrov S. E. Solov’ev Yu. V. Uvarov A. A. Osipov A. A. |
| Affiliation: | 1.Peter the Great St. Petersburg Polytechnical University, 195251, St. Petersburg, Russia ;2.CORIAL, 38190, Bernin, France ;3.Institute of Mineralogy, Urals Branch, Russian Academy of Sciences, 456317, Miass, Russia ; |
| Abstract: | Russian Microelectronics - The peculiarities of etching 4H silicon carbide (4H-SiC) in F-containing inductively-coupled plasma at lowered values of power absorbed in an RF discharge are considered.... |
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