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The Effect of Temperature on the Development of a Contrast HSQ Electronic Resist |
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| Authors: | Tatarintsev A. A. Shishlyannikov A. V. Rudenko K. V. Rogozhin A. E. Ieshkin A. E. |
| Affiliation: | 1.Valiev Institute of Physics and Technology, Russian Academy of Sciences, 117218, Moscow, Russia ;2.Faculty of Physics, Moscow State University, 119991, Moscow, Russia ;3.AO NIIME Zelenograd, 124460, Moscow, Russia ; |
| Abstract: | Russian Microelectronics - A study was made of the dependence of the contrast value of a negative electron resist based on hydrogen-silsesquioxane (HSQ) in the process of the development of... |
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