Preparation and etching processing of planar thin film of Pr3+-doped fluorozirconate glass |
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Authors: | Y. Kawamoto M. Teramoto T. Hatano M. Shojiya |
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Affiliation: | (1) Department of Chemistry, Faculty of Science, Kobe University, Nada, Kobe, 657-8501, Japan;(2) Optics Technology Division, Takatsuki Laboratory, Minolta Company, Takatsuki, Osaka, 569-8503, Japan;(3) Division of Molecular Science, Kobe University, Nada, Kobe, 657-8501, Japan |
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Abstract: | Planar thin-films of a 60ZrF4 · 35BaF2 · 5PrF3 composition were successfully prepared from Zr(hfa)4, Ba(hfa)2(tg), Pr(fod)3 and NF3 by an electron cyclotron resonance plasma-enhanced chemical vapor deposition technique. The films obtained were colorless and amorphous. As etching processing of the prepared thin-film, dry etching was performed using Ar, CF4, SF6, Cl2 and Cl2-BCl3 gases. The Ar etching in which no reactive ion-etching is anticipated exhibited the fastest etching rate. Wet etching was also performed using a ZrOCl2-HCl etching solution. The etching rate was extremely fast compared with those of dry etching. In this etching, however, undesirable side-etching occurred. At the present stage, therefore, the most preferable etching processing is dry etching by an Ar gas. |
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