Accuracy of an effective channel length/External resistance extraction algorithm for MOSFET's

The accuracy of an effective channel length/external resistance extraction algorithm for MOSFET's is assessed. This is accomplished by exercising the algorithm with current-voltage data generated by two-dimensional numerical device simulation; the extracted quantities are directly compared to their known counterparts as they exist in the cross section of the simulated device. Extracted effective channel length is found to be within 0.07 µm of the metallurgical channel length in both the conventional and LDD MOSFET's studied here. Extracted external resistance is found to be a reasonable first-order estimate of actual device resistance external to the metallurgical channel but is unable to supply proper information regarding the gate bias dependence of this quantity.