An InGaAs/InAlAs superlattice avalanche photodiode with a gain bandwidth product of 90 GHz |
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Authors: | T Kagawa H Asai Y Kawamura |
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Affiliation: | NTT Opto-Electron. Lab., Kanagawa, Japan; |
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Abstract: | The authors describe the fabrication of an InGaAs/InAlAs superlattice avalanche photodiode with a gain-bandwidth product of 90 GHz. The device is composed of an InGaAs/InAlAs superlattice multiplication region and an InGaAs photoabsorption layer. The effect of the superlattice multiplication region thickness on the gain-bandwidth product was studied. A gain-bandwidth product of 90 GHz was obtained for the device with a multiplication region thickness of 0.52 mu m. Low noise performance is compatible with the high gain-bandwidth product due to improvement of the ionization rate ratio made by introducing a superlattice structure into the multiplication region.<> |
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