Effect of Low Temperature Annealing on the Magnetic Properties of Ga1?xMnxAs/GaAs Superlattices |
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Authors: | S. J. Chung S. Lee I. W. Park X. Liu J. K. Furdyna |
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Affiliation: | (1) Department of Physics, Korea University, Seoul, 136-701, Korea;(2) Korean Basic Science Institute, Seoul, 136-701, Korea;(3) Department of Physics, University of Notre Dame, Notre Dame, Indiana, 46556 |
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Abstract: | We have studied the effect of low-temperature (LT) annealing on the properties of Ga1–xMnxAs/GaAs superlattices (SLs). One SL contained GaAs layers doped by Be (which acts as a p-type dopant), while the GaAs layers of the other SL were undoped. The Be-doped SL exhibited a coercive field (HC) three times larger than the undoped SL, and showed a much more robust remanent magnetization (Mr). While the effect of LT annealing on the undoped SL was relatively minor, magnetic properties of the Be-doped SL changed significantly after annealing. The coercive field of the Be-doped SL was reduced about three times, becoming comparable to that of the undoped SL. After annealing the temperature dependence of Mr in the Be-doped SL also became similar to the undoped SL. We discuss the effect of LT annealing on the magnetic properties of the two SL systems in terms of inter-diffusion of carriers, and of the reduced sensitivity to annealing characteristic of capped structures. |
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Keywords: | GaMnAs Ferromagnetic Semiconductor Magnetization Superlattices |
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