Ferroelectric and dielectric properties of ferroelectromagnet Pb(Fe1/2Nb1/2)O3 ceramics and thin films |
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| Authors: | X. S. Gao X. Y. Chen J. Yin J. Wu Z. G. Liu M. Wang |
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| Affiliation: | (1) National Laboratory of Solid State Microstructures, Nanjing University, Nanjing, 210093, People's Republic of China;(2) National Laboratory of Solid State Microstructures, Nanjing University, Nanjing, 210093, People's Republic of China;(3) National Laboratory of Crystal Materials, Shandong University, Jinan, 250100, People's Republic of China |
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| Abstract: | The ferroelectric and dielectric properties of ferroelectromagnet Pb(Fe1/2Nb1/2)O3 (PFN) ceramics and thin films prepared by pulsed laser deposition (PLD) have been investigated systematically. PFN ceramics experienced a para-ferroelectric transition and a para-antiferromagnetic transition at 380 K and 145 K, respectively. At room temperature, it has an electrical remnant polarization of 11.5  C/cm2 and a coercive field of 4.04 kV/cm. The dielectric behaviors show characteristics of diffusive phase transition at a wide temperature range around 380 K. Anomalies in the dielectric constant and loss tangent have been observed near the Neel temperature of 145 K, indicating a coupling between the ferroelectric and antiferromagnetic orders in PFN ceramics. At room temperature, the PFN films exhibited a remnant electric polarization of 7.4 C/cm2, a coercive field of 10.5 kV/cm, and a dielectric constant of 486 at frequency of 10 kHz, indicating their potential applications in memory devices. |
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