High-power single-mode laser diodes (λ = 1.1–1.2 μm) based on quantum-confined AlInGaAs/InP heterostructures 期刊界 All Journals 搜尽天下杂志传播学术成果专业期刊搜索期刊信息化学术搜索

High-power single-mode laser diodes (λ = 1.1–1.2 μm) based on quantum-confined AlInGaAs/InP heterostructures

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