首页 | 本学科首页   官方微博 | 高级检索  
     


Generation of propagation-invariant light beams from semiconductor light sources
Authors:G S Sokolovskii  V V Dudelev  S N Losev  S A Zolotovskaya  A G Deryagin  V I Kuchinskii  E U Rafailov  W Sibbett
Affiliation:1. Ioffe Physico-Technical Institute, Russian Academy of Sciences, St. Petersburg, 194021, Russia
2. Division of Electronic Engineering and Physics, University of Dundee, Dundee, DD1 4HN, UK
3. School of Physics and Astronomy, University of St. Andrews, St. Andrews, KY16 9SS, UK
Abstract:We have studied the possibility of generating propagation-invariant (nondiffracting) light beams using various semiconductor sources of radiation. The propagation-invariant (Bessel) beams have been generated using cone-shaped lenses (axicones) with an apical angle of 178° and 170°, which provided beams with a central spot diameter of 100 and 10 μm, respectively. The radiation sources were represented by various types of light-emitting diodes, quasi-single-mode semiconductor vertical-cavity surface-emitting lasers and broad-stripe (100 μm) edge-emitting laser diodes. It is demonstrated that these semiconductor light sources offer a promising basis for the generation of propagation-invariant light beams in various devices (including optical tweezers) intended for manipulating micro- and nanodimensional objects.
Keywords:
本文献已被 SpringerLink 等数据库收录!
设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司  京ICP备09084417号