RuO2/GaN Schottky contact formation with superiorforward and reverse characteristics |
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| Authors: | Suk-Hun Lee Jae-Kyu Chun Jae-Jin Hur Jae-Seung Lee Gi-Hong Rue Young-Ho Bae Sung-Ho Hahm Yong-Hyun Lee Jung-Hee Lee |
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| Affiliation: | Sch. of Electron. & Electr. Eng., Kyungpook Nat. Univ., Taegu; |
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| Abstract: | This is a first time report of a ruthenium oxide (RuO2) Schottky contact on GaN. RuO2 and Pt Schottky diodes were fabricated and their characteristics compared. When the RuO2 Schottky contact was annealed at 500°C for 30 min, the current-voltage (I-V) and capacitance-voltage (C-V) characteristics of the RuO2 were dramatically improved. The annealed RuO2 /GaN Schottky contact exhibited a reverse leakage current that was at least two or three orders lower in magnitude than that of the Pt/GaN contact along with a very large barrier height of 1.46 eV, which is the highest value ever reported for a GaN Schottky system |
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