| Abstract: | An over 10% efficient electrodeposited CdS/CdTe solar cell has been prepared after CdCl2 treatment. The open circuit voltage, Voc, short-circuit current, Jsc and fill factor, FF were 758 mV, 21 mA cm−2 and 0.65 respectively. The diode factor calculated from current-voltage-temperature measurements changed from 1.54 at 324 K to 2.64 at 146 K. The voltage factor, α ranged from 22.83 at 324 K to 29.46 at 146 K. Data from current-voltage-temperature measurements agrees with the model of Miller and Olsen and indicates that the current transport was a combination of tunneling and interface recombination. Capacitance-voltage-temperature measurements showed that capacitance decreased with increasing frequency and increased with temperature. Capacitance was insensitive to temperature indicating an intrinsic or low-doped depletion layer. The density of interface states was found to be 6.4 × 1010 cm−2 eV−1 at 293 K. The carrier concentration of CdTe calculated from Mott-Schottky plot was 1.5 × 1016 cm−3. |
