Effect of growth temperature on performance of AIGaAs/lnGaAs/GaAs QW laser diodes |
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| Authors: | F Bugge G Erbert I Rechenberg U Zeimer M Weyers M Procop |
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| Affiliation: | 1. Ferdinand-Braun-Institut für H?chstfrequenztechnik, D-12489, Berlin, Germany
2. Bundesanstalt für Materialforschung und -prüning, D-12205, Berlin, Germany
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| Abstract: | Growth and characterization results are presented for high-power laser diodes with AlGaAs cladding and waveguide layers and
strained In1-xGaxAs quantum wells with 0.09 < x < 0.25 grown by metalorganic vapor phase epitaxy at different temperatures. Photoluminescence
at 300 and 10K, Auger spectroscopy, and high-resolution x-ray measurements are discussed. Broad area laser diodes have been
fabricated with different cavity length and threshold current densities, absorption coefficients, internal efficiencies, and
degradation rates have been measured. |
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| Keywords: | InGaAs laser diodes metalorganic vapor phase epitaxy (MOVPE) strained quantum wells |
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