| 用光声技术测量ZnO薄膜的压电系数 |
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| 引用本文： | 黎光,殷庆瑞,罗维根,殷之文.用光声技术测量ZnO薄膜的压电系数[J].无机材料学报,1987(1). |
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| 作者姓名： | 黎光 殷庆瑞 罗维根 殷之文 |
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| 作者单位： | 中国科学院上海硅酸盐研究所
(黎光，殷庆瑞，罗维根)，中国科学院上海硅酸盐研究所(殷之文) |
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| 摘 要： | 本文报导了用光声技术测量溅射 ZnO 薄膜的压电系数,介绍了用来测量 ZnO 薄膜压电系数的理论分析和实验方法。本实验所得压电系数 e_(33)、e_(31)的值分别为0.817C/m~2和-0.431C/m~2,与 ZnO 单晶的值相比是合理的。
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| 关 键 词： | 光声效应 压电效应 ZnO 薄膜 |
Measurement of Piezoelectric Coefficients of ZnO Thin Film with Photoacoustic Technique |
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| Li Guang Yin Qingrui Luo Weigen Yin Zhiwen.Measurement of Piezoelectric Coefficients of ZnO Thin Film with Photoacoustic Technique[J].Journal of Inorganic Materials,1987(1). |
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| Authors: | Li Guang Yin Qingrui Luo Weigen Yin Zhiwen |
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| Abstract: | Piezoelectric coefficients e_(33),e_(31)of sputtered ZnO thin film have been mea-sured by photoacoustic technique,e_(33) and e_(31) values obtained are 0.817 C/m~2and-0.431C/m~2 respectively.The theoretical consideration and experimentalprocedures used to evaluate the piezoelectric coefficients of ZnO thin films havebeen presented as well. |
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| Keywords: | Photoacoustic effect Piezoelectric effect ZnO Thin film |
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