Study of x/spl alpha/-Fe/sub 2/O/sub 3/-(1-x)ZrO/sub 2/ solid solution for low-temperature resistive oxygen gas sensors |
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Authors: | Wenqing Cao Ooi Kiang Tan Weiguang Zhu Pan J.S. Jiang Bin |
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Affiliation: | Sch. of Electr. & Electron. Eng., Nanyang Technol. Univ., Singapore; |
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Abstract: | A noble type of oxygen-sensitive and electrical-conductive material, ZrO/sub 2/-based with /spl alpha/-Fe/sub 2/O/sub 3/ thick-film gas sensor, was investigated for low operating temperature. Amorphous-like solid solutions of x/spl alpha/-Fe/sub 2/O/sub 3/-(1-x)ZrO/sub 2/ powders were derived using the high-energy ball milling technique, and their physical and microstructural properties were characterized from DTA, XRD, TEM, and XPS. The oxygen gas-sensing properties of the screen-printed thick-film gas sensors fabricated from such mechanically-alloyed materials were characterized systematically. Very good sensing properties were obtained with a relative resistance value of 82 in 20% oxygen, and at a low operating temperature of 320/spl deg/C. AC impedance spectra and thermally stimulated current were characterized to investigate the conduction properties of the solid solution, 0.2/spl alpha/-Fe/sub 2/O/sub 3/-0.8ZrO/sub 2/, in air and nitrogen (carrier gas), respectively. It was found that the Arrhenius plots of /spl sigma/T versus 1000/T have two distinct gradients corresponding to two activation energies in the high and low temperature regions. The transition temperature occurs at about 320/spl deg/C that corresponds to an optimal operating temperature of the gas sensor. It is believed that the high oxygen vacancy concentration present in the solid solution, 0.2/spl alpha/-Fe/sub 2/O/sub 3/-0.8ZrO/sub 2/, and the dissociation of the associated oxygen vacancy defect complexes at 320/spl deg/C are the critical factors for the high relative resistance to oxygen gas at low operating temperature. |
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