A Ka-band micromachined low-phase-noise oscillator |
| |
| Authors: | Brown AR Rebeiz GM |
| |
| Affiliation: | Dept. of Electr. Eng., Michigan Univ., Ann Arbor, MI; |
| |
| Abstract: | A low-phase-noise 28.65 GHz oscillator has been demonstrated using a planar resonator. The resonator is micromachined close to the transistor and has an unloaded Q of 460. The oscillator uses a commercially available high electron mobility transistor (HEMT) for the active device, and results in an output power of 0.6 dBm with a 5.7% DC-RF efficiency. The measured phase noise is -92 dBc/Hz at a 100 kHz offset frequency and -122 dBc/Hz at 1 MHz offset frequency. This is compared with a low-Q planar design showing a 10 dB improvement in phase noise. The micromachined resonator is competitive with other hybrid nonplanar technologies, such as dielectric resonators |
| |
| Keywords: | |
|
|
