基于纳米氧化钛电子传输层的量子点发光二极管器件的制备与研究

为了获得高效而经济的光电器件,采用湿法旋涂技术制备量子点发光二极管器件( QLED),并对其光电特性进行了测试。此器件基于纳米二氧化钛( TiO2)的电子传输层,采用ITO玻璃作为阳极,Al为阴极,PEDOT为空穴注入层,TFB为空穴传输层,量子点( QD)作为发光层的结构。研究发现,QLED器件的开启电压为2.6 V,发光高度大于10 cd/m2。实验结果说明了TiO2可以作为获得高效QLED器件以及其他光电器件的一种有效途径。

Fabrication and study of quantum dot light-emitting diode based on TiO2 electron transport layer

In this paper, a quantum-dot light-emitting diode (QLED) using wet spin-coating method was successfully fabricated. Based on TiO2nanoparticles as the electron transport layer, the structure of QLED is consisting of ITO anode, Al cathode, the hole injection of PEDOT, hole transport layer of TFB and emitting layer of QD. Meanwhile, the photo-electrical property of QLED was also tested and it is found that the turn of voltage is 2.6 V and maximum luminance is higherthan 10 cd/m2. These results indicate that TiO2 provides an alternate and effective approach to achieve high-performance QLEDs and also other optoelectronic devices.