Effect of High Magnetic Field on Growth Behavior of Compound Layers during Reactive Diffusion between Solid Cu and Liquid Al |
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| Authors: | B Xu WP Tong CZ Liu H Zhang L Zuo JC He Key Laboratory of National Education Ministry for Electromagnetic Processing of Materials Northeastern University Shenyang China |
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| Affiliation: | B. Xu1),W.P. Tong1),C.Z. Liu2),H. Zhang1),L. Zuo1) and J.C. He1) 1) Key Laboratory of National Education Ministry for Electromagnetic Processing of Materials,Northeastern University,Shenyang 110004,China 2) Department of Materials Engineering,Shenyang Institute of Aeronautical Engineering,Shenyang 110034,China |
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| Abstract: | The effect of magnetic field on the growth behavior of compound layer was examined at the interface between the solid Cu and liquid Al during reactive diffusion. It was found that the thickness of compound layer was reduced by the high magnetic field. The growth activation energy in β, γ1 and ε2 layers under a high magnetic field was larger than those in non magnetic circumstances, the increment percentage being 4.8%, 13.3% and 5.5%, respectively. |
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| Keywords: | Diffusion Activation energy High magnetic field Al Cu |
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