| 磁控溅射技术制备Al_2O_3掺杂ZnO透明导电膜的性能 |
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| 引用本文： | 田力,唐世洪. 磁控溅射技术制备Al_2O_3掺杂ZnO透明导电膜的性能[J]. 材料导报, 2011, 0(Z1) |
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| 作者姓名： | 田力 唐世洪 |
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| 作者单位： | 吉首大学物理科学与信息工程学院; |
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| 基金项目： | 湖南省自然科学基金资助项目(2006GK3083); 湖南省吉首大学2009研究生立项资助课题(09JDY002) |
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| 摘 要： | 以纯度为99.9%的98%(质量分数)ZnO、2%(质量分数)Al_2O_3陶瓷靶为溅射靶材,采用射频磁控溅射法在玻璃衬底上制备了Al_2O_3掺杂的ZnO薄膜。采用X射线衍射仪、扫描电子显微镜、紫外可见光谱仪等方法测试和分析了不同衬底温度、溅射偏压以及退火工艺对ZAO薄膜形貌结构、光电学性能的影响。结果表明,在衬底温度200℃、溅射时间30min、负偏压60V、退火温度300℃时制得的薄膜的可见光透过率为81%,最低电阻率为9.2×10~(-1)Ω·cm。
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| 关 键 词： | ZnO 磁控溅射法 衬底温度 溅射偏压 退火工艺 |
Property Research of Aluminum Oxide-doped Zinc Oxide Thin Films Prepared by Radio-frequency Magnetron Sputtering |
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| TIAN Li,TANG Shihong. Property Research of Aluminum Oxide-doped Zinc Oxide Thin Films Prepared by Radio-frequency Magnetron Sputtering[J]. Materials Review, 2011, 0(Z1) |
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| Authors: | TIAN Li TANG Shihong |
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| Affiliation: | TIAN Li,TANG Shihong (College of Physics Science and Information Engineering,Jishou University,Jishou 416000) |
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| Abstract: | In general,flat surface zinc oxide thin films without textured structure are grown via magnectron sputtering methods.High purity metallic ZnO(99.9%) and 2wt%Al_2O_3 used as source materials,textured surface aluminum oxidedoped zinc oxide(ZAO) thin films were prepared by radio frequency(RF) magnetron reactive sputtering on common floating glass.The influence of different substrate temperatures,sputtering bias-voltages,annealing technologies on the microstructure,photoelectric properties properties of ZnO fil... |
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| Keywords: | ZnO magnetron sputtering substrate temperature sputtering bias-voltage annealing technology |
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