| PECVD制备氢化非晶硅薄膜的氢含量研究 |
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| 引用本文： | 王祖强,王丹名,林伟,吕祖彬,张宇,金永珉.PECVD制备氢化非晶硅薄膜的氢含量研究[J].材料导报,2011(Z1). |
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| 作者姓名： | 王祖强 王丹名 林伟 吕祖彬 张宇 金永珉 |
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| 作者单位： | 成都京东方光电科技有限公司; |
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| 摘 要： | 采用等离子增强化学气相沉积工艺在硅片上制备a-Si:H薄膜,用傅里叶变换红外光谱仪测试薄膜的红外光谱吸收峰。研究了衬底温度、工艺压强和氢气稀释比对a-Si:H薄膜中氢含量的影响。结果表明,随着衬底温度升高,氢含量显著减小;压强增大时,氢含量也增大;氢气稀释比增大,氢含量反而减小。选择适当的工艺参数,可以控制a-Si:H薄膜的氢含量,从而改善a-Si:H薄膜性能和微结构。研究结果对低温多晶硅制造工艺也有一定的指导意义。
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| 关 键 词： | 氢化非晶硅 氢含量 衬底温度 工艺压强 稀释比 FTIR |
Study on the Hydrogen Content of Hydrogenated Amorphous Silicon Thin Film Prepared by PECVD |
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| WANG Zuqiang,WANG Danming,LIN Wei,LU Zubin,ZHANG Yu,Kim Y.M..Study on the Hydrogen Content of Hydrogenated Amorphous Silicon Thin Film Prepared by PECVD[J].Materials Review,2011(Z1). |
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| Authors: | WANG Zuqiang WANG Danming LIN Wei LU Zubin ZHANG Yu Kim YM |
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| Affiliation: | WANG Zuqiang,WANG Danming,LIN Wei,LU Zubin,ZHANG Yu,Kim Y.M. (Chengdu BOE Optoelectronics Technology Co.,Ltd,Chengdu 611731) |
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| Abstract: | A-Si:H film was prepared by plasma enhanced chemical vapor deposition process.Fourier-transform infrared spectrometer was used to characterize the infrared spectral feature of films deposited on the silicon chip. The effects of the substrate temperature,process pressure and hydrogen dilution ratio on the hydrogen content of the films are analyzed.The result showed that the hydrogen content of the films increases with decreasing substrate temperature evidently,as well as with lowering process pressure or red... |
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| Keywords: | hydrogenated amorphous silicon hydrogen content substrate temperature process pressure dilution ratio FTIR |
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