| 铝膜沉积工艺对AIC法制备多晶硅薄膜的影响 |
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| 引用本文： | 陈海力,沈鸿烈,唐正霞,杨超,江丰.铝膜沉积工艺对AIC法制备多晶硅薄膜的影响[J].材料导报,2011,25(14):43-46. |
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| 作者姓名： | 陈海力 沈鸿烈 唐正霞 杨超 江丰 |
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| 作者单位： | 南京航空航天大学材料科学与技术学院,南京,210016 |
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| 基金项目： | 国家高技术研究发展计划(863计划)(2006AA03Z219) |
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| 摘 要： | 采用真空热蒸发和磁控溅射两种方法沉积铝膜,通过对Glass/Si/SiO2/Al叠层结构进行铝诱导晶化(AIC)制备多晶硅薄膜。采用X射线衍射谱(XRD)、光学显微镜和拉曼光谱对样品进行分析,研究两种铝膜沉积工艺对AIC法制备多晶硅性能的影响。结果表明,采用两种方法沉积的铝膜均能诱导出(111)高度择优取向的大晶粒尺寸(～100μm)的多晶硅薄膜,但与磁控溅射沉积相比,真空热蒸发沉积的铝膜诱导出的多晶硅薄膜应力更小、结晶质量更高,且晶化速率更快。
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| 关 键 词： | 铝诱导晶化 多晶硅薄膜 磁控溅射 真空热蒸发 |
Influence of Aluminum Deposition Technique on the Property of Polycrystalline Silicon Films by AIC |
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| CHEN Haili,SHEN Honglie,TANG Zhengxia,YANG Chao,JIANG Feng.Influence of Aluminum Deposition Technique on the Property of Polycrystalline Silicon Films by AIC[J].Materials Review,2011,25(14):43-46. |
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| Authors: | CHEN Haili SHEN Honglie TANG Zhengxia YANG Chao JIANG Feng |
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| Affiliation: | CHEN Haili,SHEN Honglie,TANG Zhengxia,YANG Chao,JIANG Feng(College of Materials Science & Technology,Nanjing University of Aeronautics & Astronautics,Nanjing 210016) |
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| Abstract: | Two kinds of aluminum films were deposited by vacuum thermal evaporation and magnetron sputtering.They were used to induce polycrystalline silicon films from glass/Si/SiO2/Al tandem structure by aluminum-induced crystallization(AIC) process.The induced films were characterized with X-ray diffraction(XRD),optical microscopy and Raman spectroscopy.The influence of different aluminum deposition technique on the property of the polycrystalline silicon films by AIC was studied.The results show that both kinds of... |
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| Keywords: | aluminum-induced crystallization polycrystalline silicon films magnetron sputtering vacuum thermal evaporation |
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