Low-temperature gate dielectrics formed by plasma anodisation ofsilicon nitride |
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| Authors: | Goswami R. Butcher J.B. Ginige R. Zhang J.F. Taylor S. Eccleston W. |
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| Affiliation: | Microelectron. Centre, Middlesex Polytech., London ; |
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| Abstract: | Silicon nitrides, deposited on silicon by PECVD using an SiH4 /NH3 plasma at 300°C, were anodised in an oxygen plasma at 500°C. The resulting dielectric appears to have lower fixed charge, leakage current and interface trap density than the original PECVD nitride, and to have the potential of use as a gate dielectric for MIS devices in VLSI circuits |
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