二次发射体MgO薄膜的俄歇电子能谱的研究

本文叙述了用PHI—550型给定的俄歇电子能谱(AES)研究了一种新的、性能优异的二次电子发射材料——MgO薄膜。薄膜由Ag—Mg合金经特殊高温激活工艺处理而成。以前人们对这种薄膜内部的各种元素的化学状态以及纵向原子浓度的分布状态一直不太清楚,本实验的成功证明了俄歇(Auger)电子能谱是研究这种薄膜的一种非常合适的实验方法。从实验结果中,我们发现如下几点 1.激活后,Mg和O原子的化学状态发生了显著的变化。 2.激活后,Mg、O和Ag原子的纵深分布也发生了显著的变化。 3.Mg原子氧化不充分,为了改进这一缺点,我们发明了一种新工艺。 4.使用新工艺激活,Mg原子可获充分氧化。

STUDY ON SECONDARY ELECTRON EMITTER MgO THIN FiLM WITH AUGER ELECTRON SPECTROSCOPY

The purpose of this paper is to research into a new and wonderful secondary electron emitter MgO thin film with AugerElectron Spectroscopy (AES) by PHI:550. This thin film is made of Ag Mg alloy by use of a specific high temperature activation technique. The informations about elemental chemical states and distributions in depth of the thin film have not been known clearly before. The experimental result, which is very successful, demonstrates that AES is a very suitable experimental method for this film. From the experimental results, we discover that. 1. chemical states of Mg, and O atoms changed distinctly after activation. 2. Mg, O and Ag atom distirbutions in a depth of thin film changed distinctly after activation. 3. Mg atoms were incompletely oxidized, and in order to improve this, we have invented a new activation technique. 4. Mg atoms oxidized completely by use of the new activation technique.