Quantum dot injection heterolaser with ultrahigh thermal stability of the threshold current up to 50 °C |
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| Authors: | M V Maksimov N Yu Gordeev S V Zaitsev P S Kop’ev I V Kochnev N N Ledentsov A V Lunev S S Ruvimov A V Sakharov A F Tsatsul’nikov Yu M Shernyakov Zh I Alferov D Bimberg |
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| Affiliation: | 1. A. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia
2. Technische Universit?t Berling, D-10623, Berling, Germany
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| Abstract: | Gaseous phase epitaxy from metal organic compounds is used to obtain a low-temperature injection laser with an active region
based on In0.5Ga0.5As/GaAs quantum dots. Optimizing the growth conditions and geometric parameters of the structure has made it possible to increase
the range of ultrahigh thermal stability in the threshold current (the characteristic temperature is T
0=385 K) up to 50 °C.
Fiz. Tekh. Poluprovodn. 31, 226–229 (February 1997) |
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