| 异质结耗尽层基区侧复合对突变HBT重要性分析 |
| |
| 引用本文： | 周守利,任晓敏.异质结耗尽层基区侧复合对突变HBT重要性分析[J].半导体学报,2008,29(4):741-745. |
| |
| 作者姓名： | 周守利 任晓敏 |
| |
| 作者单位： | [1]浙江工业大学信息学院,杭州310014 [2]北京邮电大学电信工程学院,北京100876 |
| |
| 基金项目： | 国家重点基础研究发展计划(973计划) |
| |
| 摘 要： | 基于热场发射.扩散载流子输运模型,在电流连续性方程中包含异质结(BB结)耗尽层基区侧复合电流的前提下,推导出了描述突变HBT电流特性的新解析方程.在此基础上,探讨了对BB结耗尽层基区侧复合电流各不同考虑情况下的HBT电流计算结果的差异程度.结果表明:在较高集电极电流密度处,E-B结耗尽层基区侧的复合电流很重要;此外,在电流连续性方程中包含E-B结耗尽层基区侧的复合电流,这在更高集电极电流密度处也是必要的.
|
| 关 键 词： | HBT 热场发射 扩散 复合电流 电流连续性方程 |
| 文章编号： | 0253-4177(2008)04-0741-05 |
| 修稿时间： | 11/5/2007 9:09:05 AM |
An Analysis of the Importance of Recombination in the Base Side of the Emitter-Base SCR in Abrupt HBTs |
| |
| Zhou Shouli and Ren Xiaomin.An Analysis of the Importance of Recombination in the Base Side of the Emitter-Base SCR in Abrupt HBTs[J].Chinese Journal of Semiconductors,2008,29(4):741-745. |
| |
| Authors: | Zhou Shouli and Ren Xiaomin |
| |
| Affiliation: | College of Information Engineering,Zhejiang University of Technology,Hangzhou 310014,China;School of Telecommunication Engineering,Beijing University of Posts and Telecommunications,Beijing 100876,China |
| |
| Abstract: | In this paper,we investigate the importance of including recombination in the base side of the emitter-base space-charge-region(SCR) in the current continuity equation when computing the current gain in abrupt HBTs.Based on the thermionic field-diffusion model,new analytical expressions for the terminal currents are proposed.These new expressions are more accurate in predicting the performance of HBTs operating at high collector current density because of the inclusion of the recombination currents in the current continuity equation. |
| |
| Keywords: | HBTs thermionic-field-diffusion recombination currents current continuity equation |
| 本文献已被 CNKI 维普 万方数据 等数据库收录！ |
| 点击此处可从《半导体学报》浏览原始摘要信息 |
|
点击此处可从《半导体学报》下载全文 |
