Investigation of the RTN amplitude statistics of nanoscale MOS devices by the statistical impedance field method |
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Authors: | Giulio Torrente Niccolò Castellani Andrea Ghetti Christian Monzio Compagnoni Andrea L. Lacaita Alessandro S. Spinelli Augusto Benvenuti |
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Affiliation: | 1. Dipartimento di Elettronica, Informazione e Bioingegneria, Politecnico di Milano, piazza L. da Vinci 32, 20133, Milan, Italy 2. Process R&D, Micron Technology Inc., 20864, Agrate Brianza, MB, Italy
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Abstract: | This paper presents a numerical investigation of the random telegraph noise amplitude in nanoscale MOS devices based on the statistical impedance field method. This method allows a strong reduction of the computational burdens required for the calculation of the amplitude statistics with respect to conventional Monte Carlo models based on the numerical implementation of microscopic differences on the simulated device structure, allowing the exploration of lower probability levels. Despite a rather good estimation of the amplitude statistics, however, the method results in relevant inaccuracies when looking at the single Monte Carlo samples, due to the linear approximations involved. |
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