Junctionless MOSFETs with laterally graded-doping channel for analog/RF applications

In this paper, we propose a laterally graded-channel pseudo-junctionless (GPJL) MOSFET for analog/RF applications. We examine the dynamical performance of GPJL MOSFET and compare it with the common junctionless (JL) MOSFET architecture using a 2-D full-band electron Monte Carlo simulator (MC) with quantum correction. Our results indicate that the GPJL MOSFET outperforms the conventional JL MOSFET, yielding higher values of drain current (I _ds), transconductance (g _m), and cutoff frequency (f _t). Further, the emerging electric field and velocity distributions, as a consequence of the channel engineering introduced by the GPJL MOSFET, result in lower output conductance (g _ds) and higher early voltage (V _ea). The preeminence of the GPJL transistor over the JL transistor is further illustrated by showing improvements on the intrinsic voltage gain (A _vo) in the subthreshold regime, to as high as 61 %. These results indicate that our proposed GPJL MOSFET yields improvement in the analog/RF performance metrics as compared to JL MOSFETs.