Improving operation lifetime of OLED by using thermally activated delayed fluorescence as host |
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| Authors: | HU Jun-tao HU Sheng YE Kang-li WEI Qing-qing XU Kai WANG Xiang-hua |
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| Affiliation: | Key Lab of Special Display Technology, Ministry of Education, National Engineering Lab of Special Display Technology, State Key Lab of Advanced Display Technology, Academy of Opto-Electronic Technology, Hefei University of Technology, Hefei 230009, China,Key Lab of Special Display Technology, Ministry of Education, National Engineering Lab of Special Display Technology, State Key Lab of Advanced Display Technology, Academy of Opto-Electronic Technology, Hefei University of Technology, Hefei 230009, China,Key Lab of Special Display Technology, Ministry of Education, National Engineering Lab of Special Display Technology, State Key Lab of Advanced Display Technology, Academy of Opto-Electronic Technology, Hefei University of Technology, Hefei 230009, China,Key Lab of Special Display Technology, Ministry of Education, National Engineering Lab of Special Display Technology, State Key Lab of Advanced Display Technology, Academy of Opto-Electronic Technology, Hefei University of Technology, Hefei 230009, China,Key Lab of Special Display Technology, Ministry of Education, National Engineering Lab of Special Display Technology, State Key Lab of Advanced Display Technology, Academy of Opto-Electronic Technology, Hefei University of Technology, Hefei 230009, China and Key Lab of Special Display Technology, Ministry of Education, National Engineering Lab of Special Display Technology, State Key Lab of Advanced Display Technology, Academy of Opto-Electronic Technology, Hefei University of Technology, Hefei 230009, China |
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| Abstract: | We fabricated organic light-emitting diodes (OLEDs) with the thermally activated delayed fluorescence (TADF) material of 4CzIPN, which show better stability compared with the 4,4’-Bis(carbazol-9-yl)biphenyl (CBP) based devices. The half lifetime of the device using 4CzIPN as host material has doubled, and a slower voltage rise compared with that of CBP-based devices has been achieved, which indicates the improvement of stability. We attribute the better stability to the good film morphology and difficult crystallization property of 4CzIPN. Our results suggest that employing the 4CzIPN as host material can be a promising way of fabricating OLEDs with longer operation lifetime. |
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