Design and fabrication of 25-channel 200 GHz AWG based on Si nanowire waveguides |
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Authors: | LI Kai-li ZHANG Jia-shun AN Jun-ming LI Jian-guang WANG Liang-liang WANG Yue WU Yuan-d YIN Xiao-jie and HU Xiong-wei |
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Affiliation: | State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing 100083, China,State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China,State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing 100083, China,State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China,State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China,State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China,State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing 100083, China,State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China and State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China |
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Abstract: | A 25-channel 200 GHz arrayed waveguide grating (AWG) based on Si nanowire waveguides is designed, simulated and fabricated. Transfer function method is used in the simulation and error analysis of AWG with width fluctuations. The 25-channel 200 GHz AWG exhibits central channel insertion loss of 6.7 dB, crosstalk of ?13 dB, and central wavelength of 1 560.55 nm. The error analysis can explain the experimental results of 25-channel 200 GHz AWG well. By using deep ultraviolet lithography (DUV) and inductively coupled plasma etching (ICP) technologies, the devices are fabricated on silicon- on-insulator (SOI) substrate. |
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