| 低温烧结AlN陶瓷基片 |
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| 引用本文： | 周和平,吴音,刘耀诚,缪卫国.低温烧结AlN陶瓷基片[J].电子元件与材料,1998,17(3):9-11. |
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| 作者姓名： | 周和平 吴音 刘耀诚 缪卫国 |
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| 作者单位： | 清华大学材料科学与工程系 |
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| 摘 要： | 通过添加助烧结剂和改进粉体性能，进行ＡｌＮ陶瓷的低温致密化烧结。研究结果表明，添加以Ｄｙ２Ｏ３为主的助烧结剂系统，在１６５０℃下，无压烧结４ｈ，热导率高达１５６Ｗ／（ｍ·Ｋ）；而对ＡｌＮ粉体进行冲击波处理，可以提高粉体的烧结活性，使烧结温度降低２５℃。讨论了低温烧结ＡｌＮ陶瓷基片及低温共烧多层ＡｌＮ陶瓷基片的制备工艺。两步排胶法可以较好地解决金属Ｗ氧化及ＡｌＮ陶瓷颗粒表面吸附残余碳的问题，是制备ＡｌＮ陶瓷与金属Ｗ共烧多层基片的有效排胶方法。
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| 关 键 词： | AlN陶瓷 热导率 流延成型 低温烧结 多层叠片 共烧 |
AlN ceramic substrates sintered at low temperature. |
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| Zhou Heping,Wu Yin,Liu Yaocheng,Miao Weiguo.AlN ceramic substrates sintered at low temperature.[J].Electronic Components & Materials,1998,17(3):9-11. |
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| Authors: | Zhou Heping Wu Yin Liu Yaocheng Miao Weiguo |
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| Abstract: | Compact AlN ceramics sintered at low temperature can be acquired by adding sintering additives and improving powders. With Dy 2O 3 based sintering additives, the thermal conductivity of the samples reaches 156 W/(m·K) when sintered at 1 650℃ for 4 h without pressure. The powder can be activated and the sintering temperature can be reduced by 25℃ by treating AIN powder with impact wave. The problems of W oxidation and surface absorption of remnant carbon are solved properly by the two step burnout method, which is effective for cofiring AlN multilayer substrates at low temperature.(15 refs ) |
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| Keywords: | AIN ceramics thermal conductivity tape casting low temperature sintering multilayer substrates cofiring |
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