| 受主掺杂对ZnO片式压敏电阻材料性能的影响 |
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| 引用本文： | 付明,胡敏.受主掺杂对ZnO片式压敏电阻材料性能的影响[J].中国材料科技与设备,2008,5(4):46-48. |
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| 作者姓名： | 付明 胡敏 |
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| 作者单位： | 华中科技大学电子科学与技术系,湖北武汉430074 |
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| 摘 要： | 研究了一价受主Li^＋对ZnO片式压敏电阻材料的电性能和晶界电参数的影响。材料中添加适量的Li^＋离子，可提高压敏电阻的非线性系数、改进器件的漏电流特性。当Li^＋离子添加量从0增加至300mol／ppm时，晶界势垒高度φB由0.7eV增加为0.87eV，晶粒中载流子浓度ND由2.2×10^23／m^3下降为8.5×10^22／m^3，ZnO的电阻率ρg由1.02Ω·cm增加为1.98Ω·cm。
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| 关 键 词： | ZnO片式压敏电阻 受主掺杂 电性能 晶界电参数 |
Effects of Acceptor Addition on Electric Characteristics of ZnO Varistor Materials |
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| FU Ming,HU Min.Effects of Acceptor Addition on Electric Characteristics of ZnO Varistor Materials[J].Chinese Materials Science Technology & Equipment,2008,5(4):46-48. |
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| Authors: | FU Ming HU Min |
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| Affiliation: | (Department of Electronic Science and Technology, Huazhong University of Science and Technology,Hubei, Wuhan,430074, China) |
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| Abstract: | Effects of Li^＋ acceptor addition on electric properties and grain boundary parameters were researched. The non-linear coefficient and leakage current characteristics of ZnO varistors could be improved by doping a proper amount of Li^＋ ions.While Li^＋ content increase from 0 to 300ppm, the barrier height increased from 0.7eV to 0.87eV, the resistivity of ZnO grains increased from 1.02Ω·cm to 1.98Ω·cm, and the carrier density in ZnO grains decreased from 2.2×10^23/m^3 to 8.5×10^22/m^3. |
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| Keywords: | ZnO chip varistors Acceptor addition Electrical properties Parameters of grain boundaries |
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