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Closed-form physical model for VLSI bipolar devices consideringenergy transport |
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| Authors: | Kuo J.B. Huang H.J. Lu T.C. |
| Affiliation: | Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei ; |
| Abstract: | A closed-form physical model is reported for VLSI bipolar devices considering energy transport. Based on the model, for a base width of 810 Å, the bipolar device, biased at Vcb=2 V, has a peak electron temperature of over 700 K, which results in a 5% reduction in the collector current |
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