用于硬盘NiP基片CMP的一种碱性SiO_2抛光液

在NiP基片的化学机械抛光中,针对现有酸性抛光液存在的易腐蚀、易污染和以Al2O3为磨料造成易划伤表面的质量问题,尝试使用SiO2水溶胶作为抛光磨料,通过加入非离子表面活性剂和螯合剂等,配制成一种碱性环境下的硬盘基片抛光液。通过化学机械抛光试验,发现这种碱性SiO2抛光液在硬盘NiP基片抛光中具有250nm/min的抛光速率,抛光后的表面粗糙度为0.8nm,表面光滑,几乎观察不到划痕及其他微观缺陷。

An Alkaline SiO2 Slurry for CMP of the NiP Substrate of Hard Disk

Now acidic slurry is easy to corrode and pollute in the process of polishing the NiP substrate,and Al2O3 has usually brought bad quality of the surface such as scratch.So an alkaline SiO2 slurry for hard disk substrate was made up of an SiO2 abrasive,an nonmetallic active agent and an chelating agent.Through experiments of chemical mechanical polishing(CMP),it is discovered that polishing rate of the alkaline SiO2 slurry can reach 250 nm/min for polishing the NiP substrate,and the surface roughness can reach 0-8 nm after polishing,the surface becomes extremely smooth,and scratch and other microscopic flaws are nearly out-of-sight.