Comparison of analysis methods for package-induced stresses on moulded Hall sensors

Due to the piezoresistive and the piezo-Hall effect in semiconductor materials, Hall sensors show a strong temperature dependency and also a drift when subjected to temperature cycles Manic et al. (2000). Four factors mainly influence the mechanical stress in the sensitive layer. These are the geometry of the device, the differences of the coefficients of thermal expansion of the package materials, the temperature-dependent material properties and the time-dependent, viscous material properties. The objective of this investigation was to determine the mechanical stress in a moulded Hall sensor during the packaging process by finite-element simulation in comparison to experimental methods. It is shown that after each process-step the mechanical stress in the sensitive layer changes over time depending on the absolute value and the rate of the temperature change. Measurements of the inverse bending radius of glued and moulded chips show good agreement to the simulations.