Gold metallizations for eutectic bonding of silicon wafers |
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| Authors: | S Lani A Bosseboeuf B Belier C Clerc C Gousset J Aubert |
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| Affiliation: | 1. Institut d’Electronique Fondamentale, UMR CNRS 8622, Université Paris Sud, Bat.220, 91405, Orsay Cedex, France
2. Centre de Spectrométrie Nucléaire et de Spectrométrie de Masse, IN2P3-CNRS, Université Paris Sud, Bat.104, 91405, Orsay Cedex, France
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| Abstract: | Gold eutectic bonding of silicon wafers is a good candidate for wafer level vacuum packaging of vibrating MEMS: in this paper we investigated several e-beam evaporated metallizations stacks including a titanium adhesion layer, an optional diffusion barrier (Ni or Pt) and a gold film for eutectic bonding on Si and SiO2/Si wafers. Interdiffusion in the multilayers for annealing temperatures (380–430°C) larger than the Au–Si eutectic temperature (363°C) and times corresponding to a bonding process was characterized by RBS, roughness and resistivity measurements. Au/Pt/Ti and Au/Ti/SiO2 were found to have the best characteristics for bonding. This was confirmed by bonding experiments. |
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