硅、锗和氩离子注入富硅二氧化硅的电致发光

将Si、Ge和Ar三种离子注入到磁控溅射制备的富硅二氧化硅和热生长的二氧化硅中,在N2气氛中,作550、650、750、850、950和1050℃退火后,进行电致发光研究.对比样品为退火条件相同的未经注入的上述两种二氧化硅.对于离子注入情况,只观察到Au/1050℃退火的离子注入的富硅二氧化硅/p-Si的电致发光.低于1050℃退火的离子注入富硅二氧化硅和上述各种温度下退火的热生长二氧化硅,无论离子注入与否,都未观察到电致发光.Au/未注入富硅二氧化硅/p-Si的电致发光光谱在1.8eV处出现主峰,在2.4eV处还有一肩峰.在Au/Si注入富硅二氧化硅/p-Si的电致发光谱中,上述两峰的

Electroluminescence of Si,Ge and Ar IOn-Implanted Si-Rich SiO2

Si\|rich SiO\-2 films are fabricated using the RF magnetron sputtering technique and a comparative study of EL from Au/Si\|rich SiO\-2/p\|Si and that from Au/ion implanted Si\|rich SiO\-2/p\|Si is made.Compared to the Au/Si\|rich SiO\-2/p\|Si whose EL spectrum has a peak at 1.8eV and a shoulder at 2.4eV,both Au/Ge implanted Si\|rich SiO\-2/p\|Si and Au/Ar implanted Si\|rich SiO\-2/p\|Si have a new band at 2 2eV,while Au/Si implanted Si\|rich SiO\-2/p\|Si only enhances the 1 8eV and 2 4eV peaks in different degrees. Some SiO\-2 films are also fabricated with the thermal grown technique and an investigation is carried out.But no EL can be found from the Au/thermal grown SiO\-2/p\|Si, no matter whether the thermal grown SiO\-2 films are implanted or not.The results are explained by the Tunneling\|Quantum Confinement\|Luminescence Centers (TQCLC) model.