| SiC衬底AlN缓冲层的应变对GaN外延层质量的影响 |
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| 引用本文： | 王丽,房玉龙,尹甲运,敦少博,刘波,冯志红. SiC衬底AlN缓冲层的应变对GaN外延层质量的影响[J]. 半导体技术, 2012, 37(8): 630-633 |
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| 作者姓名： | 王丽 房玉龙 尹甲运 敦少博 刘波 冯志红 |
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| 作者单位： | 科技信息中心 |
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| 基金项目： | 国家自然科学基金重大项目(60890192,60876009) |
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| 摘 要： | 在3英寸(1英寸=2.54 cm)SiC衬底上采用金属有机物化学气相沉积(MOCVD)法生长GaN外延材料。研究了AlN缓冲层的应变状态对GaN外延层应变状态和质量的影响。使用原子力显微镜和高分辨率X射线双晶衍射仪观察样品表面形貌,表征外延材料质量的变化,使用高分辨喇曼光谱仪观察外延材料应力的变化,提出了基于外延生长的应变变化模型。实验表明,GaN外延层的张应变随着AlN缓冲层应变状态的由压变张逐渐减小,随着GaN张应力的逐渐减小,GaN位错密度也大大减少,表面形貌也逐渐变好。
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| 关 键 词： | 金属有机物化学气相沉积(MOCVD) GaN外延层 AlN缓冲层 失配 应变 应力 |
Effect of the Strain of AlN Buffer Layer on the Quality Evolution of GaN Epilayer Grown on SiC Substrate |
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| Wang Li,Fang Yulong,Yin Jiayun,Dun Shaobo,Liu Bo,Feng Zhihong. Effect of the Strain of AlN Buffer Layer on the Quality Evolution of GaN Epilayer Grown on SiC Substrate[J]. Semiconductor Technology, 2012, 37(8): 630-633 |
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| Authors: | Wang Li Fang Yulong Yin Jiayun Dun Shaobo Liu Bo Feng Zhihong |
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| Affiliation: | 1.Information Center of Science and Technology,Beijing 100044,China; 2.Science and Technology on ASIC Laboratory,Shijiazhuang 050051,China) |
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| Abstract: | The GaN epilayer was grown by the metal-organic chemical vapor deposition on 3-inch SiC substrate.The influence of the strain of AlN buffer layer on the quality evolution and quality of GaN epilayer were studied by the atomic force microscopy,high-resolution X-ray diffractometry and Raman scattering.A model based on the strain evolution during the epitaxial growth is put forward.The results show that the tensile strain of the GaN layers decreases with the increment of the compressive strain of the AlN buffers.With the decrement of the tensile stress of the GaN layer,the thread dislocation density decreases and the surface morphology gets better. |
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| Keywords: | metal-organic chemical vapor deposition(MOCVD) GaN epilayer AlN buffer layer mismatch strain stress |
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