RESURF AlGaN/GaN HEMT for high voltage power switching |
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| Authors: | Karmalkar S Jianyu Deng Shur MS |
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| Affiliation: | Dept. of Electr. Eng., Indian Inst. of Technol., Madras; |
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| Abstract: | A novel HEMT configuration based on the RESURF technique is proposed for very high voltage power switching applications. It employs a p-n junction below the 2-DEG channel and two field plates, one extending from the gate and the other from the drain, to distribute the electric field over the gate to drain separation. 2-D simulations indicate a breakdown voltage >1 KV at on-resistance of ~1 mΩ·cm2 (neglecting contact resistances) for the device |
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