| 电子束低温蒸发ITO膜增透、增反特性研究 |
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| 引用本文： | 齐龙茵,张德贤,何俊峰,崔光龙,赵飞,刘召军,李胜林. 电子束低温蒸发ITO膜增透、增反特性研究[J]. 真空, 2006, 43(6): 8-10 |
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| 作者姓名： | 齐龙茵 张德贤 何俊峰 崔光龙 赵飞 刘召军 李胜林 |
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| 作者单位： | 南开大学电子科学与技术系,天津,300071 |
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| 摘 要： | 本实验是在低温条件下，采用电子柬蒸发制备ITO透明导电薄膜，通过监测电阻来控制薄膜的厚度，通过控制薄膜厚度研究了增透和增反两种效果的ITO膜的制备及膜的光学特性。当膜厚达170nm和83nm时透过率和反射率可达95％和6％。
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| 关 键 词： | 增透 增反 柔性衬底 电子束蒸发 |
| 文章编号： | 1002-0322（2006）06-0008-03 |
| 收稿时间： | 2006-01-15 |
| 修稿时间： | 2006-01-15 |
Transmittance/Reflectance upgrading of ITO thin films prepared through electron beam evaporation at low temperature |
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| QI Long-yin,ZHANG De-xian,HE Jun-feng,CUI Guang-long,ZHAO Fei,LIU Zhao-jun,LI Sheng-lin. Transmittance/Reflectance upgrading of ITO thin films prepared through electron beam evaporation at low temperature[J]. Vacuum(China), 2006, 43(6): 8-10 |
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| Authors: | QI Long-yin ZHANG De-xian HE Jun-feng CUI Guang-long ZHAO Fei LIU Zhao-jun LI Sheng-lin |
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| Affiliation: | Department of Electronic Science and Technology Nankai University, Tianjin 300071 ,China |
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| Abstract: | An experiment was done to upgrade the transmittance and reflectance of transparent and conductive ITO(indium tin oxide) thin films through electron beam evaporation at low temperature,where the film resistance was monitored to control film thickness.Then,how the controlled film thickness affects the upgrading of film's transmittance and reflectance was investigated with respect to the preparation process.The results showed that the transmittance and reflectance are up to 95% and 6% if the film thickness are 170nm and 83nm,respectively. |
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| Keywords: | ITO |
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