| Abstract: | Electrically active defects in the device region are routinely monitored by CV measurements of reverse-biased field-induced (FI) pn junctions in MOS structures. While useful, this approach is sensitive only to near mid gap defects. Here, we demonstrate a method for interrogation of forward-biased FI pn junctions, which can reveal defect levels over a significantly wider region of the band gap. The method proposed is based on a simultaneous measurement of the gate current and the high frequency gate capacitance in non-equilibrium non-steady state in response to a linear gate voltage ramp which drives the MOS capacitor from inversion equilibrium towards accumulation. This recombination-sensitive technique enables a self-consistent determination of the forward current–voltage characteristic of the FI pn junction. It makes a wider range of important impurities, especially metallic contaminants, accessible to detection by MOS CV approaches. Since the approach satisfies the low-injection condition, the results can be directly related to the properties of the defect centres, thus facilitating defect identification and control. |
