| 弛豫铁电陶瓷PST中反相畴结构的HREM研究 |
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| 引用本文： | 蔡丽英,张孝文.弛豫铁电陶瓷PST中反相畴结构的HREM研究[J].电子显微学报,1995,14(5):354-360. |
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| 作者姓名： | 蔡丽英 张孝文 |
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| 作者单位： | 清华大学化学系，清华大学材料科学系 |
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| 摘 要： | 本工作用高分辨电子显微学方法研究了弛豫铁电陶瓷Ｐｂ（Ｓｃ０．５Ｔａ０．５）Ｏ３（ＰＳＴ）中的有序－无序结构，直接观察到有序－无序结构畴界及反相畴界（ＡＰＢｓ），对反相畴界的结构进行了分析，指出在ＰＳＴ中的反相畴往往是（１１１）面的层错，晶格位移在（１１１）方向上，位移量是１／２（１１１）。提出了在ＰＳＴ中ＡＰＢｓ形成的机制。
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| 关 键 词： | 弛豫铁电陶瓷 反相畴结构 电子显微学 |
HREM Study of Antiphase Domain Boundaries in Relaxor Ferroelectric Ceramics PST |
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| Cai Liying Zhang Xiaowen,Wang XingTong.HREM Study of Antiphase Domain Boundaries in Relaxor Ferroelectric Ceramics PST[J].Journal of Chinese Electron Microscopy Society,1995,14(5):354-360. |
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| Authors: | Cai Liying Zhang Xiaowen Wang XingTong |
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| Abstract: | The ordered and disordered microstructures have been studied by high resolution electron microscopy(HREM)in relaxor ferroelectric ceramics lead scandium tantalate(PST).The ordered-disordered domainboundaries and antiphase domain boundaries(APBs)have been observed.After analyzing APB structures,weshow that APBs often are the layer displacement of{111},and the desplacement is in<111>direction .The mechanism of the formation of APBs in PST have been discussed. |
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| Keywords: | Relaxor ferroelectric ceramics Antiphase domain boundary High resolution electron mi-croscopy |
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