Growth of high mobility InSb by metalorganic chemical vapor deposition |
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Authors: | D L Partin L Green J Heremans |
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Affiliation: | (1) Physics Department, General Motors Research Laboratories, 48090-9055 Warren, MI |
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Abstract: | Thin films of InSb have been grown on insulating GaAs substrates using the metalorganic chemical vapor deposition technique
with trimethyl indium and trimethyl antimony as reactants. We find that the mobilities obtained are usually low unless indium
is predeposited onto the substrate. This indium predeposition technique greatly improves the yield of InSb films with mobilities
of ~50000 crn2V−1S−1 at room temperature and a typical thickness of 2 microns. With this predeposition technique, the electron mobilities of these
films become relatively independent of the vapor stroichiometry during growth and of the growth temperature. The electron
mobilities are also very uniform across a wafer. These properties are obtained even when the film growth rate exceeds 2 μm/h. |
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Keywords: | Electron mobility Epitaxy GaAs InSb Narrow gap semiconductor |
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