| CdTe/CdMnTe多量子阱的生长和激子复合动力学性质的研究 |
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| 引用本文： | 张希清,梅增霞,段宁,Z K Tang. CdTe/CdMnTe多量子阱的生长和激子复合动力学性质的研究[J]. 功能材料, 2001, 32(3): 275-276 |
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| 作者姓名： | 张希清 梅增霞 段宁 Z K Tang |
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| 作者单位： | 1. 北方交通大学,光电子技术研究所,
2. 香港科技大学,物理系, |
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| 基金项目： | 国家自然科学基金，中国科学院激发态物理开放研究实验室基金赞助 |
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| 摘 要： | 用分子束外延在GaAs衬底上生长了CdTe/Cd0.8Mn0.2Te多量子 结构，利用X射线衍射（XRD）、低激发密度下的PL光谱和变密度激发的ps时间分辨光谱研究了CdTe/CdMnTe多量子阱的结构和激子复合特性。在变密度激发的ps时间分辨光谱中，发现不同激发密度下发光衰减时间不同，认为它的机理可能是无辐射复合引起的。
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| 关 键 词： | CdTe／CdMnTe 量子阱 激子复合 动力学 半导体 |
| 文章编号： | 1001-9731(2001)03-0275-02 |
| 修稿时间： | 1999-12-30 |
Epitaxial growth and exciton recombination properties of CdTe/Cd0.8 Mn0.2 Te quantum wells |
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| Z K Tang. Epitaxial growth and exciton recombination properties of CdTe/Cd0.8 Mn0.2 Te quantum wells[J]. Journal of Functional Materials, 2001, 32(3): 275-276 |
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| Authors: | Z K Tang |
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| Abstract: | CdTe/Cd0.8 Mn0.2 Te quantum wells were grown by molecular beam epitaxy on substrate GaAs. The structure and exciton optical properties in CdSe/CdZnSe MQWs are investigated by means of XRD spectra, photoluminescence spectra with low excitation power 77 K and time-resolved photoluminescence spectra with different excitation power. The exciton emission linewidth is about 9nm at 77K. When weaker excitation was used, radiative recombination decay time of the exciton was reduced as the excitation intensity was decreased, the results indicated that the dominant mechanism may be quenching of exciton emission by impurities and defects. |
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| Keywords: | CdTe/CdMnTe quantum wells exciton |
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