Deep Reactive Ion Etching of Lead Zirconate Titanate Using Sulfur Hexafluoride Gas |
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| Authors: | Shinan Wang Xinghua Li Katsuhiro Wakabayashi Masayoshi Esashi |
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| Affiliation: | Venture Business Laboratory, Tohoku University, Sendai 980–8579, Japan;Graduate School of Engineering, Tohoku University, Sendai 980–8579, Japan;Olympus Optical Company, Ltd., Tokyo 192–8507, Japan;New Industry Creation Hatchery Center, Tohoku University, Sendai 980–8579, Japan |
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| Abstract: | A deep reactive ion etching (RIE) technique that uses sulfur hexafluoride (SF6) gas has been developed for lead zirconate titanate (Pb(Zr,Ti)O3, PZT) three-dimensional microfabrication from PZT ceramic blocks. The etching was performed by using an inductively coupled plasma that was generated in a narrow-gap vacuum chamber. The etch depth was 70 µm with a maximum etch rate of 0.3 µm/min and a selectivity of PZT to the electroplated nickel mask of >35:1. The sidewalls of the PZT structures were tapered, with base angles of ∼75°. Both positive RIE lag and unexpected ultrafine-slit etching phenomena were observed. |
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