PECVD下基底温度对SiC薄膜形态、成分及生长速度的影响

在单晶Si和多晶Cu基底表面上使用等离子体增强化学气相沉积(PECVD)方法沉积了SiC薄膜. 通过高分辨透射电子显微镜(HRTEM)、X射线光电子能谱仪(XPS)及扫描电子显微镜(SEM)研究基底温度对SiC薄膜成分、结构及生长速度的影响规律。结果表明: 在60~500℃基底温度下制备的SiC薄膜均为非晶态薄膜, 薄膜的生长速度随基底温度的升高而线性降低, 并且在相同沉积条件下, 薄膜在Si基底上的生长速度要高于Cu基底。此外, 薄膜中的硅碳原子比随基底温度的升高而降低, 当基底温度控制在350℃左右时, 可以获得硅碳比为1:1较理想的SiC薄膜。

Influence of Substrate Temperature on the Morphology,Composition and Growth Rate of SiC Films Deposited by PECVD

SiC films were deposited on the surface of single crystal Si(100) and polycrystalline Cu by plasma enhanced chemical vapor deposition (PECVD). The effect of substrate temperature on the composition, structure and growth rate of as-deposited films was studied by high resolution transmission electron microscope (HRTEM), X-ray photoelectron spectroscope (XPS) and scanning electron microscope (SEM). The results showed that the as-deposited films were amorphous and the growth rate of films decreased with increasing substrate temperature from 60℃ to 500℃. In addition, the growth rate of films deposited on the Si(100) wafer was higher than ones deposited on the polycrystalline Cu under the same deposition conditions. Meanwhile, it was found that the Si/C ratio of films decreased with the increase of substrate temperature. When the substrate temperature was controlled at about 350℃, the Si/C ratio in film was nearly equal to 1:1.