The thermal stability of ohmic contact to n-type InGaAs layer |
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| Authors: | J. W. Wu C. Y. Chang K. C. Lin E. Y. Chang J. S. Chen C. T. Lee |
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| Affiliation: | (1) Institute of Electronics, National Chiao Tung University, Hsinchu, Taiwan, Republic of China;(2) Institute of Materials Science and Engineering, National Chiao Tung University, Hsinchu, Taiwan, Republic of China;(3) Institute of Optical Sciences, National Central University, Chung-Li, Taiwan, Republic of China |
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| Abstract: | The thermal stability of ohmic contact to n-type InGaAs layer is investigated. When Ni/Ge/Au is used as the contact metal, the characteristics of the ohmic contact are degraded after thermal treatment. The specific contact resistance of (Ni/Ge/Au)-InGaAs ohmic contact after annealing at 450°C is about 15 times larger than that of as-deposited sample. This is due to the decomposition of InGaAs and the interdiffusion of Ga and Au. A new phase of Au4ln appears after annealing at 300°C. While in the case of Ti/Pt/Au, Au does not penetrate into the InGaAs layer as revealed by secondary ion mass spectroscopy. The specific contact resistance of (Ti/Pt/Au)-InGaAs ohmic contact after annealing at 450°C is eight times larger than that of as-deposited sample. Therefore, the thermal stability of (Ti/Pt/Au)-InGaAs ohmic contact is better than that of (Ni/Ge/Au)InGaAs ohmic contact. |
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| Keywords: | InGaAs ohmic contact specific contact resistance thermal stability |
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