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Forming-Free Unipolar Resistive Switching in BiFe0.95Co0.05O3 Films |
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| Authors: | Qingyu Xu Zheng Wen Yao Shuai Di Wu Shengqiang Zhou Heidemarie Schmidt |
| Affiliation: | 1. Department of Physics, Southeast University, Nanjing, 211189, China 2. Department of Materials Science and Engineering, Nanjing University, Nanjing, 210008, China 3. Institut f??r Ionenstrahlphysik und Materialforschung, Helmholtz-Zentrum Dresden-Rossendorf e.V., P.O. Box 510119, 01314, Dresden, Germany |
| Abstract: | We report the forming-free unipolar resistive switching effects in polycrystalline BiFe0.95Co0.05O3 films which were spin-coated on ITO/glass substrates by a chemical solution deposition method. The resistive ratio of the high resistive state (HRS) to the low resistive state (LRS) is more than 2 orders of magnitude. The conduction of the HRS is dominated by the space-charge-limited conduction mechanism, while Ohmic behavior dominates the LRS, which suggests a filamentary conduction mechanism. The oxygen vacancies are considered to play an important role in forming the conducting filaments. |
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