| AIN压电薄膜研究进展 |
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| 引用本文： | 刘吉延,斯永敏. AIN压电薄膜研究进展[J]. 材料导报, 2003, 0(Z1) |
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| 作者姓名： | 刘吉延 斯永敏 |
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| 作者单位： | 国防科技大学航天与材料工程学院，国防科技大学航天与材料工程学院 长沙 410073，长沙 410073 |
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| 摘 要： | 介绍了AlN压电薄膜的研究现状,着重突出了AlN薄膜的制备方法、择优取向结构及表面形貌等方面的研究,尤其对脉冲激光沉积工艺(PLD)镀膜的基本原理和过程、分别釆用周期价键链(PBC)理论和断键模型对薄膜晶面择优取向机理的分析作了较为详细的探讨。最后简单讨论了AlN压电薄膜研究的发展趋势。
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| 关 键 词： | AlN 压电薄膜 择优取向 脉冲激光沉积 |
Recent Developments in AIN Piezoelectric Thin Films |
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| LIU Jiyan SI Yongmin. Recent Developments in AIN Piezoelectric Thin Films[J]. Materials Review, 2003, 0(Z1) |
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| Authors: | LIU Jiyan SI Yongmin |
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| Abstract: | The present status of work on A1N piezoelectric thin films is addressed, with the emphasis put on the preparation,preferential orientation and surface morphology of A1N thin films. The principle and process of the thin film preparation by Pulsed Laser Deposition (PLD) are described, and preferential orientation mechanism is analysed through Periodic Bond Chain (PBC) theory and broken bond model separately. Then future directions are also discussed. |
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| Keywords: | A1N piezoelectric film preferential orientation pulsed laser deposition |
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