| Abstract: | This paper presents a finite element physics‐based power diode model with parameters established through an extraction procedure validated experimentally. The model core is a numerical module that solves the ambipolar diffusion equation through a variational formulation followed by an approximate solution with the finite element method. Other zones of the device are modeled with classical methods in an analytical module. This hybrid approach enables accurate modeling and simulation of power bipolar semiconductor devices, using standard SPICE circuit simulators, with low execution times. As physics‐based models need a significant number of parameters, an automatic parameter extraction method has been developed. The procedure, based on an optimization algorithm (simulated annealing), enables an efficient extraction of parameters using some simple device waveform measurements. Implementation details of power diode model, in IsSpice simulator, are presented. Experimental validation is performed. Results prove the usefulness of the proposed methodology for efficient design of power circuits through simulation. Copyright © 2008 John Wiley & Sons, Ltd. |
